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| September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control. Features -2.5A, -60V. RDS(ON) = 0.3 @ VGS = -10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _______________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25C unless otherwise noted NDT2955 -60 20 (Note 1a) Units V V A -2.5 -15 (Note 1a) (Note 1b) (Note 1c) 3 1.3 1.1 -65 to 150 W TJ,TSTG Operating and Storage Temperature Range C THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 42 12 C/W C/W * Order option J23Z for cropped center drain lead. (c) 1997 Fairchild Semiconductor Corporation NDT2955 Rev. B2 Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A VDS = -60 V, VGS = 0 V TJ = 125 C IGSSF IGSSR Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V o -60 -10 -100 100 -100 V A A nA nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 A TJ = 125 C RDS(ON) Static Drain-Source On-Resistance VGS = -10 V, ID = -2.5 A TJ = 125oC VGS = -4.5 V, ID = -2 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current Forward Transconductance VGS = -10 V, VDS = -5 V VDS = -10 V, ID = -2.5 A VDS = -25 V, VGS = 0 V, f = 1.0 MHz -12 3.5 o -2 -0.8 -2.4 -2 0.21 0.3 0.36 -4 -2.6 0.3 0.45 0.5 V A S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 570 140 40 pF pF pF SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -30 V, ID = -2.5 A, VGS = -10 V VDD = -30 V, ID = -1 A, VGEN = -10 V, RGEN = 6 8 20 20 5 16 2 4 15 40 40 20 25 5 8 ns ns ns ns nC nC nC NDT2955 Rev. B2 Electrical Characteristics (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.5 A (Note2) -2.3 -1.3 A V PD (t) = R J A (t) T J -TA = R J C CA +R (t) T J -TA = I 2 (t) x RDS(ON ) D TJ Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 42oC/W when mounted on a 1 in2 pad of 2oz copper. b. 95oC/W when mounted on a 0.066 in2 pad of 2oz copper. c. 110oC/W when mounted on a 0.0123 in2 pad of 2oz copper. 1a 1b 1c Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. NDT2955 Rev. B2 Typical Electrical Characteristics -12 3 V I D , DRAIN-SOURCE CURRENT (A) GS = -10V -8.0 -7.0 DRAIN-SOURCE ON-RESISTANCE V -6.0 -5.5 R DS(on), NORMALIZED 2.5 GS = -4.0V -4.5 -5.0 -5.5 -9 2 -6 -5.0 -6.0 1.5 -4.5 -3 -7.0 -8.0 1 -4.0 -3.5 0 0 -1 -2 -3 -4 VDS , DRAIN-SOURCE VOLTAGE (V) -5 -6 -10 0.5 0 -3 -6 -9 ID , DRAIN CURRENT (A) -12 -15 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage and Drain Current. 1.6 3 DRAIN-SOURCE ON-RESISTANCE I D = -2.5A V GS = -10V R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 V GS = -10 V R DS(ON), NORMALIZED 2 1.2 TJ = 125C 1 25C 1 -55C 0.8 0.6 -50 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J 125 150 0 0 -3 I D -6 -9 -12 -15 , DRAIN CURRENT (A) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Drain Current and Temperature. -10 1.2 25C GATE-SOURCE THRESHOLD VOLTAGE (V) V DS = -10V -8 ID , DRAIN CURRENT (A) T = -55C J 125C 1.1 V DS = V GS I D = -250A -6 V th, NORMALIZED 1 -4 0.9 -2 0.8 0 -2 -3 V GS -4 -5 -6 , GATE TO SOURCE VOLTAGE (V) -7 0.7 -50 -25 0 25 50 75 100 T J , JUNCTION TEMPERATURE (C) 125 150 Figure 5. Drain Current Variation with Gate Voltage and Temperature. Figure 6. Gate Threshold Variation with Temperature. NDT2955 Rev. B2 Typical Electrical Characteristics (continued) 1.15 10 DRAIN-SOURCE BREAKDOWN VOLTAGE (V) I D = -250A 1.1 5 -I S , REVERSE DRAIN CURRENT (A) V GS = 0V BV DSS, NORMALIZED 1 0.5 125C 25C T J = -55C 1.05 0.1 1 0.95 0.01 0.9 -50 -25 0 T J 25 50 75 100 , JUNCTION TEMPERATURE (C) 125 150 0.001 -0.3 -0.6 V SD -0.9 -1.2 -1.5 -1.8 -2.1 , BODY DIODE FORWARD VOLTAGE (V) Figure 7. Breakdown Voltage Variation with Temperature. Figure 8. Body Diode Forward Voltage Variation with Current and Temperature 1000 10 C iss , GATE-SOURCE VOLTAGE (V) 500 300 200 8 IDS = -2.5A VDS = -10V -30V -20V CAPACITANCE (pF) C oss 6 100 4 50 30 20 0.1 f = 1 MHz V GS = 0V C rss -V 0 0 GS 2 0.2 0.5 1 2 5 10 -V DS , DRAIN TO SOURCE VOLTAGE (V) 20 50 5 10 Q g , GATE CHARGE (nC) 15 20 Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics. -VDD t d(on) ton t off tr 90% t d(off) 90% V IN D RL V OUT VOUT 10% tf VGS R GEN 10% 90% G DUT S V IN 10% 50% 50% PULSE WIDTH INVERTED Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms. NDT2955 Rev. B2 Typical Electrical Characteristics (continued) 6 , TRANSCONDUCTANCE (SIEMENS) 20 V DS = -15V T = -55C J 25C 10 5 -I D, DRAIN CURRENT (A) IM )L IT 10 0 1m us s 10 10 1s 10 s DC 0m s m s 4 2 R ( DS ON 1 0.5 125C 2 V GS = -10V 0.1 0.05 SINGLE PULSE R J A = 42 o C/W T A = 25C g 0 0 -2 -4 -6 I D , DRAIN CURRENT (A) -8 -10 FS 0.01 0.1 0.2 0.5 1 2 5 10 60 100 - V DS , DRAIN-SOURCE VOLTAGE (V) Figure 13. Transconductance Variation with Drain Current and Temperature. Figure 14. Maximum Safe Operating Area. 1 0.5 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk) 0.2 0.1 0.05 0.02 0.01 0.005 R JA (t) = r(t) * R JA R JA = See Note 1 c t1 t2 Single Pulse TJ - TA = P * R 0.002 0.001 0.0001 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 (t) JA Duty Cycle, D = t 1 / t 2 100 300 Figure 15. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. NDT2955 Rev. B2 |
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